ne681m03 nec's npn silicon transistor ? new m03 package: ? smallest transistor outline package available ? low profile/0.59 mm package height ? flat lead style for better rf performance ? high gain bandwidth product: f t = 7 ghz ? low noise figure: nf = 1.4 db features outline dimensions (units in mm) package outline m03 part number ne681m03 eiaj 1 registered number 2sc5433 package outline m03 symbols parameters and conditions units min typ max f t gain bandwidth at v ce = 3 v, i c = 7 ma, f = 1 ghz ghz 4.5 7.0 nf noise figure at v ce = 3 v, i c = 7 ma, f = 1 ghz db 1.4 2.7 |s 21e | 2 insertion power gain at v ce = 3 v, i c = 7 ma, f = 1 ghz db 10 12 h fe 2 forward current gain at v ce = 3 v, i c = 7 ma 80 145 i cbo collector cutoff current at v cb = 10 v, i e = 0 a 0.8 i ebo emitter cutoff current at v eb = 1 v, i c = 0 a 0.8 c re 3 feedback capacitance at v cb = 3 v, i e = 0, f = 1 mhz pf 0.9 electrical characteristics (t a = 25 c) pin connections 1. emitter 2. base 3. collector california eastern laboratories 1 3 2 1.20.05 0.80.1 +0.1 -0.05 0.15 1.4 0.1 (0.9) 0.590.05 0.20.1 0.45 0.45 0.30.1 te notes: 1. electronic industrial association of japan. 2. pulsed measurement, pulse width 350 s, duty cycle 2 %. 3. capacitance is measured with emitter and case connected to the guard terminal at the bridge. description nec's ne681m03 transistor is ideal for low noise, high gain, and low cost amplifier applications. nec's new low profile/ flat lead style "m03" package is ideal for today's portable wireless applications. the ne681 is also available in chip, micro-x, and six different low cost plastic surface mount package styles.
note: 1. operation in excess of any one of these parameters may result in permanent damage. symbols parameters units ratings v cbo collector to base voltage v 20 v ceo collector to emitter voltage v 10 v ebo emitter to base voltage v 1.5 i c collector current ma 65 p t total power dissipation mw 125 t j junction temperature c 150 t stg storage temperature c -65 to +150 absolute maximum ratings 1 (t a = 25 c) ne681m03 collector current, i c (ma) dc forward current gain, h fe forward current gain vs. colector current typical performance curves (t a = 25 c) v ce = 8 v 500 300 200 100 70 50 30 20 10 1 2 3 5 7 10 20 30 50 collector to emitter voltage, v ce (v) collector current, i c (ma) collector current vs. collector to emitter voltage 45 55 65 25 15 5 35 0 24 810 6 part number quantity ne681m03-a NE681M03-T1-A ordering information
model range frequency: 0.1 to 5.0 ghz bias: v ce = 2.5 v to 8 v, i c = 0.3 ma to 20 ma date: 12/98 hfe = 124 at v ce = 3 v, i c = 7 ma parameters q1 parameters q1 is 239.6e-18 mjc 0.223 bf 125 xcjc 0 nf 0.9854 cjs 0 vaf 12 vjs 0.75 ikf 0.200 mjs 0 ise 1.933e-6 fc 0.5 ne 50 tf 10e-12 br 18.25 xtf 25 nr 0.9771 vtf 0.40 var 10 itf 0.13 ikr 11.81e-3 ptf 43.1 isc 1.55e-18 tr 0.3e-9 nc 1.860 eg 1.11 re 0.870 xtb 0 rb 4.0 xti 3 rbm 5.2 kf 0 irb 1e-6 af 1 rc 4.635 cje 1.2e-12 vje 0.77 mje 0.4844 cjc 0.4e-12 vjc 0.5275 schematic (1) gummel-poon model bjt nonlinear model parameters (1) units parameter units time seconds capacitance farads inductance henries resistance ohms voltage volts current amps parameters 681m03 c cb 0.07e-12 c ce 0.01e-12 l b 0.3e-9 l e 0.8e-9 c cbpkg 0.08e-12 c cepkg 0.08e-12 l bx 0.12e-9 l cx 0.10e-9 l ex 0.12e-9 additional parameters base emitter collector l bx l b l ex l e l cx c cbpkg c cb c ce c cepkg q1 ne681m03 exclusive north american agent for nec rf, microwave & optoelectronic semiconductors california eastern laboratories ? headquarters ? 4590 patrick henry drive ? santa clara, ca 95054-1817 ? (408) 988-3500 ? telex 34-6393 ? fax (408) 988-0279 internet: http://www.cel.com 06/10/2002 data subject to change without notice life support applications these nec products are not intended for use in life support devices, appliances, or systems where the malfunction of these prod ucts can reasonably be expected to result in personal injury. the customers of cel using or selling these products for use in such applications do so at their own risk and agree to fully indemnify cel for all damages resulting from such improper use or sale.
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